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A network license works by running an application on a central server (this could be any computer, not necessarily a real server) that knows how many licenses it can dispense from a license file that SolidWorks provides to you. Each time you start SolidWorks on a computer connected to the server application, it takes one license away from the total available. This system can manage the different levels of SolidWorks, including add-ins. When you shut down SolidWorks, the license is added back to the available list. A network license offers a fairly simple and straightforward way to install and manage SolidWorks. It is a convenient way for users to share licenses when there are fewer licenses than users. Assuming most of the users are not full-time users, this can be a good solution. If a user wants to run SolidWorks, but there are no available licenses, then the user receives a message saying so, and must wait until a license becomes available. You can add licenses to the network license by getting a new license file from SolidWorks or your reseller.

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Figure 4.14: The Geometrically Based Single-Bounce Circular Model (GBSBCM), whichsuitable is for use as a macrocellular model, showing the regionin which the scatterers are located.

(3.36)

mobility and the N2 0 oxide has the lowest licle mobility. (After Hu et al., Ref. 64.)

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35 Nomura, R; Fujii, S; Kanaya, K; Matsuda, H 1990 Oxygen- or sulfur-containing organoindium compounds for precursors of indium oxide and sul de thin lms Polyhedron 9:361 366 36 Nomura, R; Sekl, Y; Matsuda, H 1992 Preparation of copper indium sul de (CuInS2) thin lms by single-source MOCVD process using Bu2 In (S Pr ) Cu ( S 2 CNPr2i ) J Mater Chem 2:765 766 37 Nomura, R; Sekl, Y; Matsuda, H 1992 Preparation of copper indium sul de (CuIn5S8) thin lms by single-source organometallic chemical vapor deposition Thin Solid Films 209:145 147 38 Hirpo, W; Dhingra, S; Sutorik, A C; Kanatzidis, M G 1993 Synthesis of mixed copper-indium chalcogenolates Single-source precursors for the photovoltaic materials CuInQ2 (Q = S, Se) J Am Chem Soc 115:1597 1599 39 Hollingsworth, J A; Hepp, A F; Buhro, W E.

1999 Spray CVD of copper indium disul de lms: Control of microstructure and crystallographic orientation Chem Vap Deposition 5:105 108 40 Hollingsworth, J A; Buhro, W E; Hepp, A F; Jenkins, P P; Stan, M A 1998 Spray chemical vapor deposition of CuInS2 thin lms for application in solar cell devices Chemical Aspects of Electronic Ceramics Processing, edited by Kumta, P N; et al, MRS Symp Proc, Vol 495, Materials Research Society, Pittsburgh, PA, pp 171 176 41 Harris, J D; Hehemann, D G; Cowen, J E; Hepp, A F; Raffaelle, R P; Hollingsworth, J A 2000 Using single source precursors and spray chemical vapor deposition to grow thin- lm CuInS2 Proceedings of the 28th IEEE Photovoltaic Specialists Conference IEEE, Piscataway, NJ pp 563 566 42 Cowen, J E; Riga, A T; Hepp, A F.

The Character Map doesn t do much in the way of improving system performance, but it is a helpful little utility that may prove invaluable for out-of-the-ordinary characters such as foreign currency symbols and math symbols; for drawings; for different characters from languages such as Arabic or Japanese; or for accents for Spanish or French words. The Character Map (see Figure 14.2) lets you simply select and copy the character to the Clipboard, and it provides the ASCII code as well.

; Duraj, S A; Banger, K K; McClarnon, R 2004 Synthesis and characterization of CuInS2 single source precursors for chemical vapor deposition J Therm Analysis and Calor 75:929 936 43 Miyake, H; Hayashi, T; Sugiyama, K 1993 Preparation of CuGaxIn1 xS2 alloys from In solutions J Cryst Growth 134:174 180 44 Shaukat, A 1990 Composition-dependent band gap variation of mixed chalcopyrites J Phys Chem Solids 51:1413 1418 45 Odier, P; Supardi, Z; De-Barros, D; Vergni res, L; Ramirez-Castellanos, J; Gonzales-Calbet, J M; Vallet-Regi, M; Villard, C; Peroz, Ch; Weiss, F 2004 Spray pyrolysis for high Tc superconductor lms Supercond Sci Technol 17: 1303 1310 46 Krumdieck, S; Sbaizero, O; Raj, R 2001 Unique precursor delivery and control afforded by low-pressure pulsed-CVD process with ultrasonic atomization J Phys IV (Proceedings) 11:1161 1168 47 Zhang, S B.

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