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gate widths of 20, 170, and 5 m, respectively. The SWNT TFTs have Cr/Au (2/20 nm) electrodes and a SiO2/epoxy (300/150 nm) gate dielectric, with channel lengths and widths of 50 and 200 m, respectively. The s-Si MOSFETs use the same design as those shown in Fig. 13.10. These devices have similar characteristics to those fabricated on the source wafers. The s-GaN HEMTs have threshold voltages (Vth) of 2.4 0.2 V, on/off ratios of >106, and transconductances of 0.6 0.5 mS; the SWNT TFTs have Vth of 5.3 1.5 V, on/off ratios of >105, and linear mobilities of 5.9 2.0 cm2/Vs; and the s-Si MOSFETs have Vth of 0.2 0.3 V, on/off ratios of >104, and linear mobilities of 500 30 cm2/Vs. Good mechanical bendability is critically important for applications in exible macroelectronics. To examine durability, bending fatigue tests were performed for each device layer using the apparatus shown in Fig. 13.14a. Figure 13.14b presents transconductances (gm) normalized to the transconductance

The scheduling algorithm is not prescribed in WiMAX; rather it is left to the implementer. All decisions about resource allocations are done by the BS; the MS can only request certain resources.7

for almost all x. If either u or 'L' is strictly monotone, this already forces V = 1 In view of (8.65) it follows from (8.62) that

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where R'h (or Rs'h) is the sheet resistance of the n-MOS (or p-MOS) poly gate, Cox is the gate capacitance per unit area, W, is the width of the n-MOS transistor, and b, and bp are geometric factors associated with the n-MOS and p-MOS. The determination of the geometric factors bn and bp can best be illustrated by the examples shown in Figure 10.11. Let's define W, and Wp as the n-MOS and p-MOS transistor width, respectively, while w, and wp are the width of each gate finger for nMOS and p-MOS, respectively. Then the definition of b, and bp can be expressed as

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where C is an empirical constant, with p taking values close to 1.5. Note that this equation is valid only for Vg, values such that the gate current is negative (i.e., consists primarily of electrons). As an approximation, it is valid for Vgs > Vd,/ 2 . Figure 6.14 shows the plot of log lifetime versus log gl/Id. It can be seen that a straight line is obtained with a gradient of - 1.5, which is consistent with Eq. 6.5. In summary, Figure 6.15 shows the different types of damage occurring in the gate voltage spectrum. At low gate voltages (even below V,), electron and interface states are created and hole trapping occurs; in the intermediate gate voltage region, interface states are the primary damage mode; and at high gate voltages, electron traps and a small amount of interface states are created. All of these damage modes occur during ac stress, as is illustrated by the waveform of Figure 6.15, and all three modes are necessary to explain the enhanced degradation during dynamic stressing of n-channel MOS devices, as is shown in the following sections. 6.4.3 n-MOS AC Stress Lifetimes

connect to the existing local loop infrastructure in order to reach the customer quickly. While many of them are building or rebuilding infrastructure to do that independently, that process takes time and is accomplished on a highly selective basis, addressing areas where the market potential justi es the investment, which clearly is not trivial. In the meantime, the thought was that competing carriers must have access at some reasonable cost to the embedded local loop plant owned by the incumbent carrier. 15.1.3.3.1 Telco Local Loops As I previously discussed, the RBOC ILECs had to satisfy a checklist of 14 points in order to provide interLATA long distance within their home states. Most especially, they were required to satisfy the state PUCs, DOJ, and FCC that interconnection was a signi cant reality or, at least, was signi cantly available on reasonable terms. Further, the costs of interconnection were required to be at levels that re ected real costs so the competing carriers could buy local loop access at compensatory wholesale rates that enabled them to retail those loops at competitive prices. Those costs were required to be unbundled so switch costs, for example, could not be applied to nonswitched facilities and the costs of support systems could not be included. The act speci ed three ways by which CLECs could provide competing local phone service:

Figure 6.24. SEM images of CuInS2 lms grown by AACVD: (a) porous, rough, dull lms, and (b) smooth, shiny, dense lms.

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